Read e-book online 3D Integration for NoC-based SoC Architectures PDF

By Chuan Seng Tan (auth.), Abbas Sheibanyrad, Frédéric Pétrot, Axel Jantsch (eds.)

ISBN-10: 1441976175

ISBN-13: 9781441976178

Back hide replica sequence: built-in Circuits and platforms 3D-Integration for NoC-based SoC Architectures through: (Editors) Abbas Sheibanyrad Frédéric Petrot Axel Janstch This e-book investigates at the gives you, demanding situations, and ideas for the 3D Integration (vertically stacking) of embedded platforms attached through a community on a chip. It covers the full architectural layout strategy for 3D-SoCs. 3D-Integration applied sciences, 3D-Design strategies, and 3D-Architectures have emerged as themes severe for present R&D resulting in a extensive variety of goods. This ebook offers a accomplished, system-level assessment of third-dimensional architectures and micro-architectures. •Presents a complete, system-level evaluation of 3-dimensional architectures and micro-architectures; •Covers the total architectural layout process for 3D-SoCs; •Includes state of the art remedy of 3D-Integration applied sciences, 3D-Design options, and 3D-Architectures.

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Extra info for 3D Integration for NoC-based SoC Architectures

Sample text

S. 1â•…Wafer Preparation and Bonding Procedures In this section, wafer bonding by Cu thermo-compression is demonstrated and characterized on blank Si wafers. All wafers used in this experiment were p-type 150€mm Si-(100) wafers of 10–20€Ω-cm resistivity. Thermal oxide (5,000€Å) was grown on the wafers. All wafers received a 10€min piranha (H2O2:H2SO4â•›=â•›1:3, by volume) solution clean followed by deionized water rinse and spin-dry prior to metallization. The next step was the deposition of Tantalum (50€nm) and Copper (300€nm) in an e-beam deposition system.

Thermal oxide (5,000€Å) was grown on the wafers. All wafers received a 10€min piranha (H2O2:H2SO4â•›=â•›1:3, by volume) solution clean followed by deionized water rinse and spin-dry prior to metallization. The next step was the deposition of Tantalum (50€nm) and Copper (300€nm) in an e-beam deposition system. Ta was used to prevent Cu out-diffusion into the oxide layer. Chamber pressure during metal deposition was 1â•›×â•›10−6€Torr. 99€nm from AFM scan. A pair of wafers was aligned face-to-face in wafer aligner and clamped together on a bonding chuck.

031 we get 345 operators on a 400€mm2 area. Again, this is a simplification, because there are fewer operators but they are pipelined. In effect, 8 operations can be completed per cycle in the best case, motivating the number 8 that we use in this example. 1╇ A. Jantsch et al. 3╅Technology Parameter Scaling To capture the performance benefits for feature size scaling of each successive generation of technology, physical properties of various on-chip communication transactions and logical operations were modeled for each node.

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3D Integration for NoC-based SoC Architectures by Chuan Seng Tan (auth.), Abbas Sheibanyrad, Frédéric Pétrot, Axel Jantsch (eds.)


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