By Chuan Seng Tan (auth.), Abbas Sheibanyrad, Frédéric Pétrot, Axel Jantsch (eds.)
Back hide replica sequence: built-in Circuits and platforms 3D-Integration for NoC-based SoC Architectures through: (Editors) Abbas Sheibanyrad Frédéric Petrot Axel Janstch This e-book investigates at the gives you, demanding situations, and ideas for the 3D Integration (vertically stacking) of embedded platforms attached through a community on a chip. It covers the full architectural layout strategy for 3D-SoCs. 3D-Integration applied sciences, 3D-Design strategies, and 3D-Architectures have emerged as themes severe for present R&D resulting in a extensive variety of goods. This ebook offers a accomplished, system-level assessment of third-dimensional architectures and micro-architectures. •Presents a complete, system-level evaluation of 3-dimensional architectures and micro-architectures; •Covers the total architectural layout process for 3D-SoCs; •Includes state of the art remedy of 3D-Integration applied sciences, 3D-Design options, and 3D-Architectures.
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Extra info for 3D Integration for NoC-based SoC Architectures
S. 1â•…Wafer Preparation and Bonding Procedures In this section, wafer bonding by Cu thermo-compression is demonstrated and characterized on blank Si wafers. All wafers used in this experiment were p-type 150Â€mm Si-(100) wafers of 10–20Â€Ω-cm resistivity. Thermal oxide (5,000Â€Å) was grown on the wafers. All wafers received a 10Â€min piranha (H2O2:H2SO4â•›=â•›1:3, by volume) solution clean followed by deionized water rinse and spin-dry prior to metallization. The next step was the deposition of Tantalum (50Â€nm) and Copper (300Â€nm) in an e-beam deposition system.
Thermal oxide (5,000Â€Å) was grown on the wafers. All wafers received a 10Â€min piranha (H2O2:H2SO4â•›=â•›1:3, by volume) solution clean followed by deionized water rinse and spin-dry prior to metallization. The next step was the deposition of Tantalum (50Â€nm) and Copper (300Â€nm) in an e-beam deposition system. Ta was used to prevent Cu out-diffusion into the oxide layer. Chamber pressure during metal deposition was 1â•›×â•›10−6Â€Torr. 99Â€nm from AFM scan. A pair of wafers was aligned face-to-face in wafer aligner and clamped together on a bonding chuck.
031 we get 345 operators on a 400Â€mm2 area. Again, this is a simplification, because there are fewer operators but they are pipelined. In effect, 8 operations can be completed per cycle in the best case, motivating the number 8 that we use in this example. 1â•‡ A. Jantsch et al. 3â•…Technology Parameter Scaling To capture the performance benefits for feature size scaling of each successive generation of technology, physical properties of various on-chip communication transactions and logical operations were modeled for each node.
3D Integration for NoC-based SoC Architectures by Chuan Seng Tan (auth.), Abbas Sheibanyrad, Frédéric Pétrot, Axel Jantsch (eds.)